Transparent layer inkist12/8/2022 ![]() Moreover, the compressive strain and hole mobility were measured by Raman and Hall effect measurement system. Then, on this optimized buffer layer, we grew the In0.2Al0.8Sb/In0.25Ga0.75Sb/linear-graded Al0.8Ga0.2Sb QW structure to obtain high hole mobility with compressive strain. We systematically evaluated the relationship between the crystal quality and electrical properties using X-ray diffraction, atomic force microscope, Raman, and the Hall effect measurement system. We grew buffer layers with various Sb effective flux conditions using molecular beam epitaxy to obtain high crystal quality and proper electrical properties. The Al0.95Ga0.05Sb buffer layer is important to achieve low substrate leakage and guarantee good channel material quality and high hole mobility.
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